RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications

RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications

LNA NF auto test solution

Low noise amplifier is a typical electron device/circuit who usually operate at the first stage in the receiver architectures. According to the cascade noise formula, if the first stage could offer a

Technique Notes -- RF LNA

Technique Notes for Low Noise Amplifier Date renew: 2023/07/28

Technique Notes -- RF Power Amplifier

Technique Notes for RF Power Amplifier Date renew: 2023/07/28

Technique Notes -- Algorithm

Technique Notes for Algorithm Date renew: 2023/07/28

Demonstration and modeling of frequency tripler based on GaN Schottky diode pair

Demonstration and modeling of frequency tripler based on GaN Schottky diode pair

Huawei HIC Doherty PA Design

Huawei HIC Doherty PA Design

Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures

Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures

Outing on Qingming Festival

CMOS Logic Transconductance and Gain

Transconductance This note is based on CMOS technology. All the equations are based on n-channel MOS. I-V Characteristic of MOSFET$~~$A Metal-Oxide-Semiconductor field effect transistor has 3 regi